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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC6145
DESCRIPTION ·High frequency multi emitter transistor ·Small package(TO-3P) ·High power handling capacity ,160W ·Complement to Type 2SA2223 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·Signal transistors for audio amplifiers ·Audio market
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
230
V
VCEO
Collector-Emitter Voltage
230
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
4.0
A
160
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website: www.iscsemi.