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2SD1060 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V(Max) @IC= 3.0A Complement to Type 2SB824 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay dr

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V(Max) @IC= 3.0A ·Complement to Type 2SB824 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers, high-speed inverters, converters, and other general large-current switching applications.