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2SD1060 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • Low collector-to-emitter saturation voltage : VCE(sat)=(.
  • )0.4V max/IC=(.
  • )3A, IB=(.
  • )0.3A. ( ) : 2SB824 JEDEC : TO-220AB EIAJ : SC-46 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1 : Base 2 : Collector 3 : Emitter.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:686I PNP/NPN Epitaxial Planar Silicon Transistors 2SB824/2SD1060 50V/5A Switching Applications Applications · Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching. Package Dimensions unit:mm 2010C [2SB824/2SD1060] Features · Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.4V max/IC=(–)3A, IB=(–)0.3A.