Datasheet Details
| Part number | 2SD1060 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.41 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1060-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1060 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.41 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1060-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V(Max) @IC= 3.0A ·Complement to Type 2SB824 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers, high-speed inverters, converters, and other general large-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 9 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1060 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1060 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ;
Compare 2SD1060 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD1060 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SD1060 | NPN EPITAXIAL PLANAR SILICON TRANSISTOR | UTC |
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2SD1060 | SILICON POWER TRANSISTOR | SavantIC |
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2SD1060 | Bipolar Transistor | ON Semiconductor |
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| 2SD1069 | Silicon NPN Power Transistor |
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