| Part number | 2SD1060 |
|---|---|
| Download | 2SD1060 Datasheet (PDF) |
| File Size | 210.41 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
SANYO |
2SD1060 | PNP/NPN Epitaxial Planar Silicon Transistors |
Unisonic Technologies |
2SD1060 | NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
SavantIC |
2SD1060 | SILICON POWER TRANSISTOR |
onsemi |
2SD1060 | Bipolar Transistor |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V(Max) @IC= 3.0A ·plement to Type 2SB824 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers, high-speed inverters, converters, and other general large-current switching applications.
