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2SD1062 - NPN Transistor

General Description

Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC=6A Wide Area of Safe Operation Complement to Type 2SB826 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, converters, a

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isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC=6A ·Wide Area of Safe Operation ·Complement to Type 2SB826 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers, high-speed inverters, converters, and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1062 isc website：www.iscsemi.