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isc Silicon NPN Darlington Power Transistor
2SD1088
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 250V(Min) ·High DC Current Gain-
: hFE= 2000(Min.)@IC= 2A ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max) @IC= 4A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high-voltage switching igniter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.
2SD1088 Datasheet
