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2SD1175 - NPN Transistor

General Description

High Breakdown Voltage- : VCBO= 1500V (Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 6.0V(Max.)@ IC= 5.0A Built-in Damper Diode Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1175 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 6.0V(Max.)@ IC= 5.0A ·Built-in Damper Diode ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.