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2SD1170 - Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min.) Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Driver for solenoid,motor and genera

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1170 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min.