| Part number | 2SD1170 |
|---|---|
| Datasheet | 2SD1170_InchangeSemiconductor.pdf |
| File Size | 196.27 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Power Transistor |
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·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1170 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 3mA;.
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1171 | Silicon NPN Transistor |
| 2SD1172 | Silicon NPN Transistor |
| 2SD1173 | Silicon NPN Transistor |
| 2SD1113 | Silicon NPN Power Transistor |
| 2SD1117 | Silicon NPN Power Transistor |
| 2SD1118 | Silicon NPN Power Transistor |
| 2SD1126 | Silicon NPN Darlington Power Transistor |
| 2SD1127 | Power Transistor |
| 2SD1141 | Power Transistor |
| 2SD1154 | Silicon NPN Power Transistor |
