| Part | 2SD1230 |
|---|---|
| Description | Silicon NPN Darlington Power Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 217.00 KB |
High DC Current Gain : hFE= 1500(Min.)@ IC= 4A, VCE= 3V Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) Complement to Type 2SB913 Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SD1230 | SANYO | PNP/NPN Epitaxial Planar Silicon Transistors |
| D1230 | SANYO | 2SD1230 |
| 2SD1238L | SANYO | PNP/NPN Epitaxial Planar Silicon Transistors |
| 2SD1236 | SANYO | PNP / NPN Epitaxial Planar Silicon Transistors |
| 2SD1235 | SANYO | PNP/NPN Epitaxial Planar Silicon Transistors |
