Datasheet4U Logo Datasheet4U.com

2SD1230 - Silicon NPN Darlington Power Transistor

Description

High DC Current Gain : hFE= 1500(Min.)@ IC= 4A, VCE= 3V Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) Complement to Type 2SB913 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1230 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SD1233 Power Transistor Inchange Semiconductor
2SD1235 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SD1235 SILICON POWER TRANSISTOR SavantIC
2SD1236 PNP / NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD1235 NPN Transistor
2SD1236 NPN Transistor
2SD1236L NPN Transistor
2SD1237 NPN Transistor
2SD1237L NPN Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Darlington Power Transistor 2SD1230 DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 4A, VCE= 3V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) ·Complement to Type 2SB913 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 2.
Published: |