2SD1230
2SD1230 is Silicon NPN Darlington Power Transistor manufactured by Inchange Semiconductor.
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- High DC Current Gain
: hFE= 1500(Min.)@ IC= 4A, VCE= 3V
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min.)
- plement to Type 2SB913
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control...
