Datasheet Details
| Part number | 2SD1230 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.00 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | 2SD1230-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Darlington Power Transistor 2SD1230.
| Part number | 2SD1230 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.00 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | 2SD1230-INCHANGE.pdf |
|
|
|
·High DC Current Gain : hFE= 1500(Min.)@ IC= 4A, VCE= 3V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) ·plement to Type 2SB913 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 2.5 W 60 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1230 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
| 2SD1235 | NPN Transistor |
| 2SD1236 | NPN Transistor |
| 2SD1236L | NPN Transistor |
| 2SD1237 | NPN Transistor |
| 2SD1237L | NPN Transistor |
| 2SD1238 | NPN Transistor |
| 2SD1238L | NPN Transistor |
| 2SD1239 | NPN Transistor |
| 2SD1202 | NPN Transistor |
| 2SD1204 | NPN Transistor |