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2SD1230 Datasheet Preview

2SD1230 Datasheet

Silicon NPN Darlington Power Transistor

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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1230
DESCRIPTION
·High DC Current Gain
: hFE= 1500(Min.)@ IC= 4A, VCE= 3V
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min.)
·Complement to Type 2SB913
APPLICATIONS
·Designed for motor drivers, printer hammer drivers, relay
drivers, voltage regulator control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
110 V
VCEO Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
6V
8A
ICM Collector Current-Peak
Collector Power Dissipation
@Ta=25
PC
Collector Power Dissipation
@TC=25
Tj Junction Temperature
12 A
2.5
W
60
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.cn
1




INCHANGE

2SD1230 Datasheet Preview

2SD1230 Datasheet

Silicon NPN Darlington Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1230
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE=
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A, IB= 8mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A, IB= 8mA
ICBO Collector Cutoff current
VCB= 80V, IE= 0
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
fT
Current-Gain—Bandwidth Product
IC= 4A; VCE= 5V
hFE DC Current Gain
Switching Times
IC= 4A; VCE= 3V
ton Turn-On Time
tstg Storage Time
tf Fall Time
IC = 4A, IB1 = -IB2= 8mA;
RL= 12.5Ω; VCC= 50V
MIN TYP. MAX UNIT
100 V
110 V
1.5 V
2.0 V
0.1 mA
3.0 mA
20 MHz
1500
0.6 μs
4.8 μs
1.6 μs
isc websitewww.iscsemi.cn
2


Part Number 2SD1230
Description Silicon NPN Darlington Power Transistor
Maker INCHANGE
Total Page 2 Pages
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