| Part | 2SD1230 |
|---|---|
| Description | Silicon NPN Darlington Power Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 217.00 KB |
Max Operating Temp: 150 °C
High DC Current Gain : hFE= 1500(Min.)@ IC= 4A, VCE= 3V - Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) - Complement to Type 2SB913 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Verical | 323 | 253+ : 1.4875 USD 500+ : 1.3375 USD 1000+ : 1.2346 USD 10000+ : 1.1008 USD |
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| Rochester Electronics | 323 | 100+ : 1.19 USD 500+ : 1.07 USD 1000+ : 0.9877 USD 10000+ : 0.8806 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| 2SD1230 | SANYO | PNP/NPN Epitaxial Planar Silicon Transistors |
| D1230 | SANYO | 2SD1230 |
| 2SD1236 | SANYO | PNP / NPN Epitaxial Planar Silicon Transistors |
| 2SD1235 | SANYO | PNP/NPN Epitaxial Planar Silicon Transistors |
| 2SD1237L | SANYO | PNP/NPN Epitaxial Planar Silicon Transistors |