Datasheet Details
| Part number | 2SD1237 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 235.80 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1237-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SD1237.
| Part number | 2SD1237 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 235.80 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1237-INCHANGE.pdf |
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·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·Large Current Capacity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers, high-speed inverters,converters, and other general high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 120 V 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 1.75 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SD1237 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
Compare 2SD1237 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1237L | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SD1237L | SILICON POWER TRANSISTOR | SavantIC |
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|---|---|
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