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2SD1266 - NPN Transistor

General Description

Low Collector Saturation Voltage : VCE(sat)= 1.2V(Max)@ IC= 3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) Good Linearity of hFE Complement to Type 2SB941 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desi

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isc Silicon NPN Power Transistor 2SD1266 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.2V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Complement to Type 2SB941 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 5 A 35 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.