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Power Transistors
2SD1266, 2SD1266A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB941 and 2SB941A
s Features
q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1266
60
VCBO
V
base voltage 2SD1266A
80
Collector to 2SD1266
60
VCEO
V
emitter voltage 2SD1266A
80
Emitter to base voltage
VEBO
6
V
Peak collector current
ICP
5
A
Collector current
IC
3
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
35 W
2
Junction temperature Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
s Elec
2SD1266 Datasheet
