The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power Transistors
2SB941, 2SB941A
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SD1266 and 2SD1266A
s Features
q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB941
–60
VCBO
V
base voltage 2SB941A
–80
Collector to 2SB941
–60
emitter voltage 2SB941A
VCEO
–80
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–5
A
Collector current
IC
Collector power TC=25°C
dissipation
Ta=25°C
PC
–3
A
35 W
2
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +15
2SD1266A Datasheet
