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2SD1279 - NPN Transistor

General Description

High Breakdown Voltage- : VCBO= 1400V (Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 8.0A Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed fo

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1279 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1400V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 8.0A ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage power switching TV horizontal deflection output applications.