Datasheet4U Logo Datasheet4U.com

2SD1358 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V Complement to Type 2SB998 Minimum Lot-to-Lot variations for robust device performance and rel

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1358 Silicon NPN Transistor Toshiba
2SD1350 Silicon NPN Transistor Panasonic Semiconductor
2SD1350A Silicon NPN Transistor Panasonic Semiconductor
2SD1351 Silicon NPN Power Transistors Inchange Semiconductor
2SD1351 NPN Complementary Silicon Power Transistors Thinki Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD1352 NPN Transistor
2SD1355 NPN Transistor
2SD1357 NPN Transistor
2SD130 NPN Transistor
2SD1300 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1358 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V ·Complement to Type 2SB998 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications ·Hammer driver,pulse motor driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.