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2SD1370 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A High DC Current Gain : hFE= 1000(Min) @ IC= 3A, VCE= 3V Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliabl

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1370 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.