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2SD1405 - NPN Transistor

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Description

High DC Current Gain : hFE= 200(Min) @IC= 0.5A Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 1A Collector Power Dissipation of 25W@ TC=25℃ Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequ

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Datasheet Details

Part number 2SD1405
Manufacturer INCHANGE
File Size 183.45 KB
Description NPN Transistor
Datasheet download datasheet 2SD1405 Datasheet
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1405 DESCRIPTION ·High DC Current Gain : hFE= 200(Min) @IC= 0.5A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 1A ·Collector Power Dissipation of 25W@ TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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