2SD1405
DESCRIPTION
- High DC Current Gain
: h FE= 200(Min) @IC= 0.5A
- Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 1A
- Collector Power Dissipation of 25W@ TC=25℃
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise...
