Low Collector Saturation Voltage
: VCE(sat)= 2.0V(Max)@ IC= 4A
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V (Min)
Complement to Type 2SB1016
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for power amplifier
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isc Silicon NPN Power Transistor
2SD1407
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 2.0V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V (Min) ·Complement to Type 2SB1016 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.5
A
25
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.
2SD1407 Datasheet
