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2SD1410 - Silicon NPN Darlington Power Transistor

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Datasheet Details

Part number 2SD1410
Manufacturer INCHANGE
File Size 212.80 KB
Description Silicon NPN Darlington Power Transistor
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2SD1410 Product details

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) Collector-Emitter Saturation Voltage- :V CE(sat)= 2.0V(Max) @IC= 4A High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter applications High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Vol

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