2SD144 Overview
·DC Current Gain -hFE = 40(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 50V(Min) ·With TO-66 Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD144 TC=25℃ unless otherwise specified SYMBOL...
