DC Current Gain -hFE = 40(Min)@ IC= 1A
Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 50V(Min)
With TO-66 Package
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD144
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 50V(Min) ·With TO-66 Package ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2.0
A
ICM
Collector Current-Peak
3.0
A
IB
Base Current
1.0
A
PC
Collector Power Dissipation@TC=25℃
15
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
isc website：www.iscsemi.
2SD144 Datasheet
