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2SD1535 - NPN Transistor

General Description

Collector-Base Breakdown Voltage- : V(BR)CBO = 500V(Min.) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high power amplifier applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO = 500V(Min.) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 12 V IC Collector Current 7 A ICM Collector Current-peak 14 A IB Base Current Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.5 A 2 W 50 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1535 isc website：www.iscsemi.