Datasheet Details
| Part number | 2SD1847 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.81 KB |
| Description | Silicon NPN Power Transistor |
| Download |
2SD1847 Download (PDF)
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| Part number | 2SD1847 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.81 KB |
| Description | Silicon NPN Power Transistor |
| Download |
2SD1847 Download (PDF)
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|
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·Collector-Base Breakdown Voltage- : VCBO= 1300V (Min.) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 15 A IB Base Current- Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 3 W 100 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1847 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
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