2SD1913 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Wide Area of Safe Operation Complement to Type 2SB1274 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for general power amplifier applications.

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2SD1913 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD1913
Manufacturer	Inchange Semiconductor
File Size	209.72 KB
Description	NPN Transistor
Datasheet	2SD1913 Datasheet

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1274 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 8 A 2 W 20 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD1913 isc website：www.iscsemi.