Good Linearity of hFE
Wide Area of Safe Operation
High DC Current-Gain Bandwidth Product
Complement to Type 2SB1317
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
High power amplification
Optimum for the output stage
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isc Silicon NPN Power Transistor
2SD1975
DESCRIPTION ·Good Linearity of hFE ·Wide Area of Safe Operation ·High DC Current-Gain Bandwidth Product ·Complement to Type 2SB1317 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High power amplification ·Optimum for the output stage of a Hi-Fi audio amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
180
V
VCEO
Collector-Emitter Voltage
180
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
25
A
3.5 W
150
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.
2SD1975 Datasheet
