Low Collector Saturation Voltage
: VCE(sat)= 0.3V(TYP.) @ IC= 2A
Collector Power Dissipation
: PC = 30W (Max)
Wide Area of Safe Operation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low frequency power amplifi
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isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 0.3V(TYP.) @ IC= 2A ·Collector Power Dissipation
: PC = 30W (Max) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Pulse
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
6
A
30 W
2.0
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD2061
isc website：www.iscsemi.
2SD2061 Datasheet
