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2SD2494 Datasheet Preview

2SD2494 Datasheet

NPN Transistor

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isc Silicon NPN Darlington Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V(Min)
·High DC Current Gain-
: hFE= 5000( Min.) @(IC= 5A, VCE= 4V)
·Low Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ (IC= 5A, IB= 5mA)
·Complement to Type 2SB1625
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio, series regulator and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
110
V
VCEO
Collector-Emitter Voltage
110
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
1
A
60
W
150
Tstg
Storage Temperature
-55~150
2SD2494
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SD2494 Datasheet Preview

2SD2494 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 5mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 5mA
ICBO
Collector Cutoff Current
VCB= 110V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 5A; VCE= 4V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
fT
Current-Gain—Bandwidth Product
IE= -0.5A ; VCE= 12V
hFE Classifications
O
P
Y
5000-12000 6500-20000 15000-30000
2SD2494
MIN TYP. MAX UNIT
110
V
2.5
V
3.0
V
100 μA
100 μA
5000
55
pF
60
MHz
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SD2494
Description NPN Transistor
Maker INCHANGE
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