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2SD2495 Datasheet Preview

2SD2495 Datasheet

NPN Transistor

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isc Silicon NPN Darlington Power Transistor
2SD2495
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V(Min)
·High DC Current Gain-
: hFE= 5000( Min.) @(IC= 5A, VCE= 4V)
·Low Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ (IC= 5A, IB= 5mA)
·Complement to Type 2SB1626
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio, series regulator and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
110
V
VCEO
Collector-Emitter Voltage
110
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
1
A
30
W
150
Tstg
Storage Temperature
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SD2495 Datasheet Preview

2SD2495 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 5mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 5mA
ICBO
Collector Cutoff Current
VCB= 110V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 5A; VCE= 4V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
fT
Current-Gain—Bandwidth Product
IE= -0.5A ; VCE= 12V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
VCC= 30V, RL= 6Ω,
IC= 5A; IB1= -IB2= 5mA,
hFE Classifications
O
P
Y
5000-12000 6500-20000 15000-30000
2SD2495
MIN TYP. MAX UNIT
110
V
2.5
V
3.0
V
100 μA
100 μA
5000
55
pF
60
MHz
0.8
μs
6.2
μs
1.1
μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SD2495
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
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2SD2495 Datasheet PDF





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