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2SD600K - NPN Transistor

General Description

High Collector Current-IC= 1.0A High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SB631K Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 1.