Datasheet Details
| Part number | 2SD628 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.12 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet |
 2SD628 Datasheet
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| Part number | 2SD628 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.12 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet |
2SD628 Datasheet
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·Collector-Emitter Sustaining Voltage- : VCEO(sus)= 100V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 5A ·Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 5A ·Complement to Type 2SB638 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier and high current switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continunous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continunous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 80 W 150 ℃ Tstg Storage Temperature Range -65~+150 ℃ 2SD628 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD628 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA;
isc Silicon NPN Darlington Power Transistor.
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