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2SD683 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) High DC Current Gain- : hFE= 500(Min.)@ IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

High voltage and high power switching applications.

Motor driver applic

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High DC Current Gain- : hFE= 500(Min.)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage and high power switching applications. ·Motor driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 150 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SD683 isc website：www.iscsemi.