2SD683 - Silicon NPN Transistor

Toshiba

Key Features

: . High DC Current Gain : hFE=500(Min. ) (VCE=5V, Ic=5A) . High Voltage : VcEO(SUS)=450V (2SD683A) . Monolithic Construction With Built-in Base-Emitter Shunt Resistor.

2SD683 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SD683
Manufacturer	Toshiba
File Size	123.92 KB
Description	Silicon NPN Transistor
Datasheet	2SD683 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) 2SD683A, HIGH VOLTAGE AND HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVE APPLICATIONS. FEATURES : . High DC Current Gain : hFE=500(Min. ) (VCE=5V, Ic=5A) . High Voltage : VcEO(SUS)=450V (2SD683A) . Monolithic Construction With Built-in Base-Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm gfe5.0MAX. . JZfcLOMAX. I3fe _ +009 #1.0—0.