2SD683A - Silicon NPN Transistor

Toshiba

Download the 2SD683A datasheet PDF. This datasheet also covers the 2SD683 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

: . High DC Current Gain : hFE=500(Min. ) (VCE=5V, Ic=5A) . High Voltage : VcEO(SUS)=450V (2SD683A) . Monolithic Construction With Built-in Base-Emitter Shunt Resistor.

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2SD683A silicon npn transistor by Toshiba - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2SD683_Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2SD683A
Manufacturer	Toshiba
File Size	123.92 KB
Description	Silicon NPN Transistor
Datasheet	2SD683A Datasheet

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Other Datasheets by Toshiba

Part Number	Description
2SD683	Silicon NPN Transistor
2SD684	NPN Transistor
2SD684A	NPN Transistor
2SD685	NPN Transistor
2SD686	NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) 2SD683A, HIGH VOLTAGE AND HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVE APPLICATIONS. FEATURES : . High DC Current Gain : hFE=500(Min. ) (VCE=5V, Ic=5A) . High Voltage : VcEO(SUS)=450V (2SD683A) . Monolithic Construction With Built-in Base-Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm gfe5.0MAX. . JZfcLOMAX. I3fe _ +009 #1.0—0.