2SD686 - NPN Transistor

Inchange Semiconductor

General Description

High DC Current Gain- : hFE = 2000(Min)@ IC= 1A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A Complement to Type 2SB676 Minimum Lot-to-Lot variations for robust device performance and relia

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Datasheet Details

Part number	2SD686
Manufacturer	Inchange Semiconductor
File Size	206.78 KB
Description	NPN Transistor
Datasheet	2SD686 Datasheet

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A ·Complement to Type 2SB676 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications. ·Hammer drive, pulse motor drive applications. ·Power amplifier applications.