High DC Current Gain
Low Collector Saturation Voltage
Excellent Safe Operating Area
High Reliability
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Motor controls
Inverters，choppers
S
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD711
DESCRIPTION ·High DC Current Gain ·Low Collector Saturation Voltage ·Excellent Safe Operating Area ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Motor controls ·Inverters，choppers ·Switching regulators ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
VCEO(SUS) Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
IB
Base Current
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
500
2SD711 Datasheet
