High DC Current Gain
: hFE= 2000(Min)@ IC= 1A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 110V(Min)
High Reliability
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio frequen
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD715
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 110V(Min) ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier and low
speed high current switching industrial use
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO VEBO
Collector-Emitter Voltage Emitter-Base Voltage
IC
Collector Current-Continuous
110
V
110
V
5
V
7
A
ICM
Collector Current-Peak
PC
ollector Power Dissipation @TC=25℃
Tj
Junction Temperature
12
A
80
W
150
℃
Tstg
Storage Temperature Rang
2SD715 Datasheet
