2SD730 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= 12A Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Pow

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2SD730 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD730
Manufacturer	Inchange Semiconductor
File Size	181.15 KB
Description	NPN Transistor
Datasheet	2SD730 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD730 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 12A ·Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulator ·General purpose amplifier amplifiers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current -Continuous 25 A ICP Collector Current-Peak 40 A IB Base Current 0.