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2SD732 - Silicon NPN Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) High Current Capability Complement to Type 2SB696 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for AF power amplifier applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·High Current Capability ·Complement to Type 2SB696 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 80 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ 2SD732 isc website：www.iscsemi.