Datasheet Details
| Part number | 2SD732 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.32 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD732-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD732 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.32 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD732-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·High Current Capability ·plement to Type 2SB696 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 80 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ 2SD732 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD732 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Voltage Breakdown IC= 5mA;
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