Datasheet Details
| Part number | 2SD73 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.05 KB |
| Description | NPN Transistor |
| Datasheet | 2SD73-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD73.
| Part number | 2SD73 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.05 KB |
| Description | NPN Transistor |
| Datasheet | 2SD73-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 60 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD73 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD733 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD733K | SILICON POWER TRANSISTOR | SavantIC |
 |
2SD734 | PNP/NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
 |
2SD734 | NPN Transistor | SEMTECH |
| Part Number | Description |
|---|---|
| 2SD730 | NPN Transistor |
| 2SD731 | NPN Transistor |
| 2SD732 | Silicon NPN Power Transistor |
| 2SD733 | NPN Transistor |
| 2SD705 | NPN Transistor |
| 2SD706 | NPN Transistor |
| 2SD711 | NPN Transistor |
| 2SD715 | NPN Transistor |
| 2SD716 | NPN Transistor |
| 2SD717 | NPN Transistor |