Datasheet Details
| Part number | 2SD730 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.15 KB |
| Description | NPN Transistor |
| Datasheet | 2SD730-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor.
| Part number | 2SD730 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.15 KB |
| Description | NPN Transistor |
| Datasheet | 2SD730-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 12A ·Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulator ·General purpose amplifier amplifiers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current -Continuous 25 A ICP Collector Current-Peak 40 A IB Base Current 0.5 A PC Collector Power Dissipation@TC=25℃ 125 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD730 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;
IB= 0 100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 12A;
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