Inchange Semiconductor 2SD730
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD730 |
|---|---|
| Datasheet | 2SD730 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.)●High DC Current Gain- : hFE= 1000(Min.)@IC= 12A
●Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Power switching●Hammer drivers
●Series and shunt regulator
●General purpose amplifier amplifiers
ABSOLUTE MAXIMUM RATINGS
(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current -Continuous 25 A ICP Collector Current-Peak 40 A IB Base Current 0.5 A PC Collector Power Dissipation@TC=25℃ 125 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD730ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector...