Datasheet Details
| Part number | 2SD733 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.18 KB |
| Description | NPN Transistor |
| Datasheet | 2SD733-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD733 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.18 KB |
| Description | NPN Transistor |
| Datasheet | 2SD733-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min) ·High Current Capability ·plement to Type 2SB697 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 20 A 100 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ 2SD733 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Voltage Breakdown IC= 5mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD733 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD733K | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD73 | NPN Transistor |
| 2SD730 | NPN Transistor |
| 2SD731 | NPN Transistor |
| 2SD732 | Silicon NPN Power Transistor |
| 2SD705 | NPN Transistor |
| 2SD706 | NPN Transistor |
| 2SD711 | NPN Transistor |
| 2SD715 | NPN Transistor |
| 2SD716 | NPN Transistor |
| 2SD717 | NPN Transistor |