High Collector-Base Breakdown Voltage
: V(BR)CBO= 800V(Min.)
High Switching Speed
Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max.)@ IC= 0.5A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for voltage switching
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isc Silicon NPN Power Transistor
2SD841
DESCRIPTION ·High Collector-Base Breakdown Voltage
: V(BR)CBO= 800V(Min.) ·High Switching Speed ·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max.)@ IC= 0.5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
800
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
IB
Base Current-Continuous
1.5
A
Collector Power Dissipation@TC=25℃
40
PC
W
Collector Power Dissipation@Ta=25℃
1.5
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
2SD841 Datasheet
