Datasheet Details
| Part number | 2SD998 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 205.98 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD998-INCHANGE.pdf
|
| Part number | 2SD998 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 205.98 KB |
| Description | NPN Transistor |
| Datasheet |
2SD998-INCHANGE.pdf
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Good Linearity of hFE Complement to Type 2SB778 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter
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