900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

2SJ529S Datasheet Preview

2SJ529S Datasheet

P-Channel MOSFET

No Preview Available !

isc P-Channel MOSFET Transistor
·FEATURES
·With TO-220F packaging
·High speed switching
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
2SJ529S
·APPLICATIONS
·Power supply
·DC-DC converters
·Motor control
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-60
VGSS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
-30
IDM
Drain Current-Single Pulsed
-120
PD
Total Dissipation
45
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX
2.78
62.5
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

2SJ529S Datasheet Preview

2SJ529S Datasheet

P-Channel MOSFET

No Preview Available !

isc P-Channel MOSFET Transistor
INCHANGE Semiconductor
2SJ529S
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= -10mA
VGS(th)
Gate Threshold Voltage
VDS=-10V; ID=-1mA
RDS(on)
Drain-Source On-Resistance
VGS= -10V; ID=-15A
IGSS
Gate-Source Leakage Current
VGS= ±16V;VDS= 0V
IDSS
Drain-Source Leakage Current
VDS= -60V; VGS= 0V
VSDF
Diode forward voltage
ISD=-30A, VGS = 0 V
-60
V
-0.8
-2.0
V
29
38
mΩ
±10
μA
-100
μA
-1.7
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark


Part Number 2SJ529S
Description P-Channel MOSFET
Maker INCHANGE
PDF Download

2SJ529S Datasheet PDF





Similar Datasheet

1 2SJ529 Silicon P Channel MOS FET High Speed Power Switching
Hitachi Semiconductor
2 2SJ529L Silicon P Channel MOS FET High Speed Power Switching
Hitachi Semiconductor
3 2SJ529S Silicon P-Channel MOSFET
Hitachi Semiconductor
4 2SJ529S P-Channel MOSFET
INCHANGE





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy