Drain Current
ID=10A@ TC=25℃
Drain Source Voltage-
: VDSS= 200V(Min)
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
High speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
V
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isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
200
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
10
A
Ptot
Total Dissipation@TC=25℃
50
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SK757
isc website：www.iscsemi.
2SK757 Datasheet
