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2SK783 - N-Channel MOSFET

General Description

such as switching power supplies .

Max.

Key Features

  • Drain Current.
  • ID=12A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 500V(Min).
  • Fast Switching Speed 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed 100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed especially for high voltage,high speed applications, such as switching power supplies . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 500 V ±20 V 12 A 125 W 150 ℃ -55~150 ℃ 2SK783 isc website：www.iscsemi.