Datasheet Details
| Part number | 4N60 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 229.22 KB |
| Description | N-Channel Mosfet Transistor |
| Download | 4N60 Download (PDF) |
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| Part number | 4N60 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 229.22 KB |
| Description | N-Channel Mosfet Transistor |
| Download | 4N60 Download (PDF) |
|
|
|
·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 4 A ID(puls) Pulse Drain Current 16 A Ptot Total Dissipation@TC=25℃ 106 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) 4N60 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS;
isc N-Channel MOSFET Transistor 4N60.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| ROUM | 4N60 | 4A 600V N-channel Enhancement Mode Power MOSFET | ROUM |
| Zibo Seno | 4N60 | Power MOSFET | Zibo Seno |
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4N60 | N-CHANNEL MOSFET | KIA |
 |
4N60 | N-CHANNEL POWER MOSFET | UTC |
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4N60 | N-Channel Power MOSFET | nELL |
| Part Number | Description |
|---|---|
| 4N60AS | N-Channel MOSFET |