Datasheet Details
| Part number | BD633 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.66 KB |
| Description | Silicon NPN Power Transistor |
| Download | BD633 Download (PDF) |
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| Part number | BD633 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.66 KB |
| Description | Silicon NPN Power Transistor |
| Download | BD633 Download (PDF) |
|
|
|
·DC Current Gain - : hFE = 40(Min.)@ IC= 25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min.) ·Complement to Type BD634 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 5 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.3 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;
isc Silicon NPN Power Transistor BD633.
| Part Number | Description |
|---|---|
| BD636 | Silicon PNP Power Transistor |
| BD609 | NPN Transistor |
| BD643 | NPN Transistor |
| BD643F | NPN Transistor |
| BD645 | NPN Transistor |
| BD645F | NPN Transistor |
| BD646 | PNP Transistor |
| BD646F | PNP Transistor |
| BD647 | NPN Transistor |
| BD647F | NPN Transistor |