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Inchange Semiconductor
BD643
DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) - High DC Current Gain : h FE= 750(Min) @IC= 3A - Low Saturation Voltage - plement to Type BD644 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use as plementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction...