Collector-Emitter Sustaining Voltage-
: VCEO(sus)= 80V(Min)
High DC Current Gain
: hFE= 750(Min) @IC= 3A
Low Collector Saturation Voltage
: VCE(sat) = 2.0 V(Max) @ IC = 3.0 A
Complement to Type BDX54B
Minimum Lot-to-Lot variations for robust device
performance and reliable o
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Darlington Power Transistor
BDX53B
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(sus)= 80V(Min) ·High DC Current Gain
: hFE= 750(Min) @IC= 3A ·Low Collector Saturation Voltage
: VCE(sat) = 2.0 V(Max) @ IC = 3.0 A ·Complement to Type BDX54B ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier and low-speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICP
Collector Current-Peak
12
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.
BDX53B Datasheet
