Datasheet Details
| Part number | BDY92 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.09 KB |
| Description | NPN Transistor |
| Datasheet |
 BDY92 Datasheet
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| Part number | BDY92 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.09 KB |
| Description | NPN Transistor |
| Datasheet |
BDY92 Datasheet
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·High DC Current Gain- : hFE= 30-120@IC= 5A ·Excellent Safe Operating Area ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching-control amplifiers, power gates,switching regulators, converters, and inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC≤25℃ TJ Junction Temperature 2 A 60 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W BDY92 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDY92 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) VCE(sat)-1 VCE(sat)-2 Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Sustaining IC= 30mA ;IB= 0 Saturation IC= 5A;
IB= 0.5A Saturation IC= 10A;
isc Silicon NPN Power Transistor.
| Part Number | Description |
|---|---|
| BDY90 | NPN Transistor |
| BDY90A | NPN Transistor |
| BDY91 | NPN Transistor |
| BDY93 | NPN Transistor |
| BDY94 | NPN Transistor |
| BDY95 | NPN Transistor |
| BDY96 | NPN Transistor |
| BDY97 | NPN Transistor |
| BDY98 | NPN Transistor |
| BDY99 | NPN Transistor |